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F4BT-1/2 is a micro dispersed ceramic PTFE composite with a woven fiberglass reinforcement through scientific formulation and strict technology procedures. This product have higher dielectric constant than the traditional PTFE copper clad laminates to meet the design and manufacturing of circuit miniaturization. Due to filling with the ceramic powder.
F4BT-1/2 have a low Z axis coefficient of thermal expansion ensures excellent reliability of plated through-holes. Besides,because of the high thermal conductivity,advantage to the heat dissipation of apparatus.
F4BT-1/2 Technical Specifications
Appearance | Meet the specification requirements for microwave PCB baseplate by National and Military Standards. | |||||||||||
Types | F4BT294 | F4BT600 | ||||||||||
Dielectric Constant | 2.94 | 6.0 | ||||||||||
Dimension(mm) | 500*600 430*430 | |||||||||||
Thickness and Tolerance(mm) | Plate thickness | 0.25 | 0.5 | 0.8 | 1.0 | |||||||
Tolerance | ±0.02～±0.04 | |||||||||||
Plate thickness | 1.5 | 2.0 | 3.0 | 4.0 | ||||||||
Tolerance | ±0.05～±0.07 | |||||||||||
Plate thickness includes the copper thickness. For special dimension,customized laminates is available | ||||||||||||
Mechanical Strength | Warp | Plate thickness(mm) | Maximum Warp | |||||||||
Single side | Double side | |||||||||||
0.25～0.5 | 0.050 | 0.025 | ||||||||||
0.8～1.0 | 0.030 | 0.020 | ||||||||||
1.5～2.0 | 0.025 | 0.015 | ||||||||||
3.0 | 0.02 | 0.010 | ||||||||||
Cutting/punching Strength | Thickness < 1mm,no burrs after cutting,minimum space between two punching holes is 0.55mm,no delamination. | |||||||||||
Thickness > 1mm,no burrs after cutting,minimum space between two punching holes is 1.10mm,no delamination. | ||||||||||||
Peel strength | Normal state:≥17N/cm,After thermal stress:≥14 N/cm | |||||||||||
Chemical Property | According to different properties of baseplates,the chemical etching method for PCB can be used. The dielectric properties of baseplates are not changed. The plating through hole can be done. The Hot Air Level temperature can not be higher than 263 degree Celsius,and can not repeated. | |||||||||||
Electrical Property | Name | Test condition | Unit | Value | ||||||||
Density | Normal state | g/ cm3 | 2.3～2.6 | |||||||||
Moisture Absorption | Dip in the distilled water of 20±2 degree Celsius for24 hours | % | ≤0.02 | |||||||||
Operating Temperature | High-low temperature chamber | degree Celsius | -50 degree Celsius～+260 degree Celsius | |||||||||
Thermal Conductivity | W/m/k | 0.4 | ||||||||||
CTE | 0～100 degree Celsius | ppm/ degree Celsius | 20(x) | |||||||||
25(y) | ||||||||||||
140(z) | ||||||||||||
Shrinkage Factor | 2 hours in boiling water | % | 0.0002 | |||||||||
Surface Resistivity | M·Ω | ≥1*104 | ||||||||||
Volume Resistivity | Normal state | MΩ.cm | ≥1*105 | |||||||||
Constant humidity and temperature | ≥1*104 | |||||||||||
Pin Resistance | 500VDC | Normal state | MΩ | ≥1*105 | ||||||||
Constant humidity and temperature | ≥1*104 | |||||||||||
Dielectric Breakdown | kv | ≥20 | ||||||||||
Dielectric Constant | 10GHZ | εr | 2.94,6.0(±2%) | |||||||||
Dissipation Factor | 10GHZ | tgδ | ≤1*10-3 | |||||||||
